| PART |
Description |
Maker |
| ENT1-169.406250-3 ENT1 |
12.5kHz Channel VHF High Power TX
|
Radiometrix Ltd
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| BLF178P |
Power LDMOS transistor 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| 55410 NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Laboratories
|
| 2SK307407 2SK3074 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| SD2923 |
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
|
STMICROELECTRONICS[STMicroelectronics]
|
| ASI10702 VFT15-28 |
VHF POWER MOSFET N-Channel Enhancement Mode
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| SD2921-10 |
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
|
STMicroelectronics
|
| ASI10708 VFT30-50 |
VHF POWER MOSFET N-Channel Enhancement Mode
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| SD293210 |
RF power transistors HF/VHF/UHF N-channel MOSFETs
|
STMicroelectronics
|
